DOI: 10.36347/sjpms.2020.v07i05.001

Pages: 51-55

Thin-films of semiconductors are widely used as an anti-reflection layer in solar cell fabrication. Zinc oxide attracts a great concern today as semiconductors and alternative material due to its electrical, optical and photonic properties in solar cell fabrication. Thus the aim of this work is to investigate the crystal structure composition and grain size of ZnO thin-films (amorphous structure) obtained from annealed Zn, ZnS, and ZnSO4 at 1000oC for 3, 6 and 9by using X-ray diffractometery while commercial ZnO used as a control sample. Results revealed that the XRD pattern for ZnO thin-film obtained from Zn annealed at 1000oC for 3, 6 and 9 hours was found to be at 002, 003, 101respectively while for ZnO samples obtained from ZnS treated under the same condition recorded at 201, 202 and 114. Moreover, findings showed that the XRD spectra for ZnO samples obtained from ZnSO4treated under the same conditions was 118, 009, and 220 respectively while for the commercial sample found to be at403.The pattern for commercial sample exhibited the highest value of intensity and ZnO thin-film crystal morphology was a cubic shape centered with a density of 4.0963 kg or g/cm3. Generally, the nano size of the prepared ZnO thin-films of different samples decreased as the annealing time increased in the range of 30.60- 41.70 nm for 9 and 3 hours at 1000oC respectively. These findings indicated that high annealing temperature for a long time improves the structure of Zno thin-films samples and control their structure at the nano size level where it promotes and enhances their electrical, optical, photonic properties to be used in new generation of solar cells.