DOI: 10.36347/sajb.2018.v06i02.003

Pages: 151-157

Nitride materials are very good candidates in various fields of electronics, optoelectronics (transistors, diodes…) and military technology (radars, communications, and others). Using HEMT (high electron mobilit y transistor) based heterostructures (AlGaN / GaN), it is possible to produce biological, chemical and medical sensors. The principle of operation relies on the properties of high mobility of two-dimensional electron gas (2DEG) and high saturation velocity. The 2DEG channel in AlGaN HEMT is very close to the surface (gate), rendering it very sensitive to the absorption of different analytes like (glucose, protein, DNA, bacteria). In this work, we focus on the application of AlGaN HEMT biosensors. We show the dependence of (2DEG density on multiple parameters), and we attempt to use this principle to detect very low glucose concentrations.